| 학회 |
한국고분자학회 |
| 학술대회 |
2010년 가을 (10/07 ~ 10/08, 대구 EXCO) |
| 권호 |
35권 2호 |
| 발표분야 |
분자전자소재 및 소자 |
| 제목 |
A simple patterning method of solution-processed ZnO thin film fortransparent thin film transistors |
| 초록 |
Transparent thin film transistors (TTFTs) have emerged as next-generation transistors because they can be applicable in transparent electronic devices. Especially, the major driving force of solution-processed zinc oxide research is its prospective use as a wide band gap semiconductor material. Since the fabrication of TTFTs is achieved by photolithography, the needs of sophisticated skills and high-cost are unavoidable. Moreover, there are two limitations in the photolithography of the TTFTs. First, ZnO-based thin films are porous. Thus, during photoresist stripping in wet etching, the stripping material soaks through thin films, damaging film properties and interfaces between the active layer and the gate insulator. Second, the materials of device are damaged by plasma in dry etching. Based on the results of the present issues, we developed a simple selective patterning method that is used with Poly(methyl methacrylate) (PMMA) for the solution-processed ZnO thin film. |
| 저자 |
김경준, 김주희, 유승철, 박시윤, 이지현, 정성윤, 조한주, 김연상
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| 소속 |
서울대 |
| 키워드 |
patterning; transistor; ZnO; UVO; PMMA
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| E-Mail |
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