| 학회 | 한국공업화학회 |
| 학술대회 | 2015년 봄 (04/29 ~ 05/01, BEXCO (부산)) |
| 권호 | 19권 1호 |
| 발표분야 | 정밀화학_포스터 |
| 제목 | Synthesis of a new choline-based leveler for bottom-up filling of Cu in TSV |
| 초록 | TSV (Through Silicon Via) is a key process to achieve 3-dimensional packaging of electronic devices. To obtain a defect-free Cu electrodeposition in TSV, some organic additives are essential, and a leveler among them is very important for effective bottom-up superfilling of Cu. A leveler facilitates the formation of flat Cu deposit on the surface having the topographic variation. Herein, we designed a new choline-based leveler based on the previously reported structures of the leveler, which generally contains nitrogen atoms. The new leveler was efficiently obtained over 4 steps from glutaric acid and the overall yield was 62%. The adsorption characteristics of the choline-based leveler were also analyzed electrochemically, which showed the successful bottom-up filling when applied to the Cu gap-filling together with a suppressor and an accelerator. |
| 저자 | 이윤재, 서영란, 김명준, 김회철, 김재정, 김영규 |
| 소속 | 서울대 |
| 키워드 | Electrodeposition; TSV; Through Silicon Via; Copper; bottom-up filling |
