| 학회 |
한국재료학회 |
| 학술대회 |
2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 |
22권 2호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Hetero Bilayer Oxide Dielectrics for Solution Processed Electronics under Low-Voltage Operation |
| 초록 |
For solution-based low-power modulating electronic devices, we demonstrated that nano-scale bilayer oxide dielectrics formulated by sol-gel precursor solution-based aluminum oxide on induced silicates for low-power-consuming electronic devices under low processing-temperature (below 150℃) and rapid processing rate (within 5 min). We also investigated the photo-irradiation effects show the rough sol-gel films are rapidly smoothened with densification of oxide formation and metal-cation linked silicate layers get to be more activated. All solution-based, Indium-Gallium-Zinc-O (IGZO) oxide thin-film-transistors (TFTs) under low-voltage operation were fabricated on the nano-scale photo-reacted bilayer dielectric films. These further investigations are expected to direct previous solution-processing techniques of metal-oxide materials to highly-productive way. |
| 저자 |
Won-June Lee1, Sungjun Park2, Jun-Gyu Choi3, Sujin Sung4, Chang-Hyun Kim1, Myung-Han Yoon2
|
| 소속 |
1School of Materials Science and Engineering, 2Gwangju Institute of Science and Technology (GIST), 3Emergent Soft System Research Team, 4RIKEN Center for Emergent Matter Science |
| 키워드 |
Solution-Processing; Sol-Gel; Oxide; Dielectric; Electronics
|
| E-Mail |
|
