| 학회 |
한국화학공학회 |
| 학술대회 |
2019년 봄 (04/24 ~ 04/26, 제주국제컨벤션센터) |
| 권호 |
25권 1호, p.869 |
| 발표분야 |
재료(Materials) |
| 제목 |
Numerical 3D simulation of plasma etch profile with real plasma chemistry |
| 초록 |
Plasma etching technology is emerging as one of the key bottleneck processes toward sub-10nm device. It is regarded that this technology is beyond the engineering regime of computer-aided development due to its inherent complexity. However, the empirical knowledge of plasma technology has taken the lead in its development so far but may be faced with limitation for the development of next-generation process. As a part of an effort to overcome these limitations, we have developed a 3D feature profile simulator strongly coupled with Zero-D bulk plasma module considering the realistic plasma chemistry. Recently, the universal surface reaction model was developed in our group. In this work, novel surface reaction model is incorporated with the 3D feature profile simulator. Finally, this approach is verified with the experimental data for a wide range of plasma conditions. We believe that this work can open new insight into plasma technology toward sub-10 nm devices. |
| 저자 |
박재형1, 유혜성1, 육영근1, 오민주1, 유동훈2, 임연호1
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| 소속 |
1전북대, 2경원테크 |
| 키워드 |
재료 |
| E-Mail |
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| 원문파일 |
초록 보기 |
