| 학회 |
한국공업화학회 |
| 학술대회 |
2019년 가을 (10/30 ~ 11/01, 제주국제컨벤션센터(ICC JEJU)) |
| 권호 |
23권 2호 |
| 발표분야 |
(특별세션) 제13회 반도체공정진단 워크숍(반도체공정/소재) |
| 제목 |
Atomic layer deposition of molybdenum films from molybdenum pentachloride and molybdenum dichloride dioxide |
| 초록 |
The lower resistivity Word Line material is very attractive to the 3DNAND device makers, because they could reduce the cell stack height while maintaining the device speed. Here, we report thermal ALD of molybdenum films on PVD TiN substrates up to 500C from high purity MoCl5 and MoO2Cl2. The properties of Mo films deposited from Mo precursors will be compared to properties of tungsten films deposited from similar WCl5 precursor. Preliminary results suggest that resistivity of the Mo films is lower compare to resistivity of tungsten films at 10-15 nm of film thickness. Rapid thermal annealing at 700C further reduced the sheet resistance of the films. In this paper, we demonstrated thermal molybdenum ALD with fluorine free Mo precursor, which shows low etch of titanium nitride substrate and relatively low resistivity compared to tungsten; which is important for next 3DNAND’s WL forming application. Details of the deposition study and properties of the Mo films will be presented. |
| 저자 |
이창원1, 이세원1, 김무성1, Sergei Ivanov2
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| 소속 |
1버슘머트리얼즈코리아, 2Versum Materials |
| 키워드 |
Memory; Vertical Structure; Word Line; ALD; Molybdenum; MoNX; Fluorine Free; Resistivity
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| E-Mail |
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