| 학회 | 한국재료학회 |
| 학술대회 | 2018년 봄 (05/16 ~ 05/18, 삼척 쏠비치 호텔&리조트) |
| 권호 | 24권 1호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Characterization of Gallium Oxynitride (GaxOyNz) films grown on C-plane sapphire substrates by plasma assisted molecular beam epitaxy |
| 초록 | Recently, monoclinic structure β-Ga2O3 has attracted considerable attention because of its outstanding optical and electronic properties such as its wide, direct bandgap and high transparence from ultraviolet (UV) to visible range. The β-Ga2O3 has been recognized as a promising material for application to high power devices, UV photodetectors, transparent conductive electrodes. In order to obtain a broad spectrum of application in electronic devices and optoelectronic devices, the doing and alloy with another materials to improve crystal quality, electrical properties, and tune the bandgap are necessary. In this study, we focus on control the bandgap of β-Ga2O3 films by adding nitrogen (N) into the β-Ga2O3 films. We grow the GaxOyNz films on C-plane sapphire substrates by plasma-assisted molecular beam epitaxy. The effect of supplied N on the crystal structure, the surface morphologies, and optical properties of GaxOyNz films have been investigated. The crystal structure of GaxOyNz films is almost not changed with different N flow and the structure of films belong the structure of β-Ga2O3. However, the crystal lattice, the surface morphology. The crystal quality of the films was improved with supplied N flow properly. The optical bandgap can tuned from 4.92 eV to 4.35 eV. |
| 저자 | Trong Si Ngo1, Duc Duy Le2, Soon-Ku Hong3 |
| 소속 | 1Department of Materials Science and Engineering, 2Chungnam National Univ., 3220 Gungdong |
| 키워드 | <P>β-Ga<SUB>2</SUB>O<SUB>3</SUB> film; Ga<SUB>x</SUB>O<SUB>y</SUB>N<SUB>z</SUB> films; plasma-assisted molecular beam epitaxy; surface morphology; optical bandgap.</P> |
