| 학회 | 한국재료학회 |
| 학술대회 | 2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 | 21권 2호 |
| 발표분야 | A. 전자/반도체 재료 |
| 제목 | Behaviors of NOMFET Evaporated with Gold, Silver and Aluminum Nanoparticles on IGZO Thin Film Transistor |
| 초록 | Recently, many attempts to describe the biological synaptic behavior of neurons have been tried. This behavior can be represented electrically by facilitating and depressing pulse current1. In this work, the transition of drain pulse current and shift of threshold voltage in nanoparticle oxide memory field effect transistor (NOMFET) were studied by fabricating the devices evaporated with gold, silver and aluminum nanoparticles on IGZO thin-film-transistor. NOMFET was fabricated by sputtering IGZO on 200-nm silicon dioxide layer which was thermally grown on p++ Si wafer. Nanoparticles of gold, silver and aluminum were fabricated by evaporating (1Å/s, 3 nm) on IGZO channel layer. The size of nanoparticles are about 20-nm for silver, and 10-nm for gold and aluminum. It was observed that the metal nanoparticles on the channel layer generated carrier trapping sites, which induced threshold voltage shift. In addition, for the case of gold nanoparticles, the drain current of NOMFET showed a facilitating ac-pulse after programming by applying positive voltage to gate electrode and depressing after erasing by applying negative voltage. Furthermore, it was confirmed that the transition ratio of the current increased with programming and erasing voltages. In particular, we report the behaviors of NOMFET evaporated with silver and aluminum nanoparticles on the IGZO channel layer. * This research was supported by the Converging Research Center Program funded by the Ministry of Science, ICT & Future Planning (Project No. 2015054348), and Brain Korea 21 Plus Program in 2015. References 1. Fabien Alibart, Ste´phane Pleutin, David Gue´rin, Christophe Novembre, Ste´phane Lenfant, Kamal Lmimouni, Christian Gamrat, and Dominique Vuillaume, Adv. Funct. Mater., 20, 330-337 (2010) |
| 저자 | Jea-Gun Park1, Hyo-Jun Kwon2, Min-Won Kim3, Eun-Hee Shim1, Ji-Sun Lee2 |
| 소속 | 1Advanced Semiconductor Materials and Devices Development Center, 2Department of Electronics and Computer Engineering, 3Hanyang Univ. |
| 키워드 | IGZO; oxide thin-film-transistor; NOMFET; TFT; synaptic behavior; nanoparticle |
