| 초록 |
A new high-k polymeric dielectric for use as gate dielectric layer of organic field-effect transistors (OFETs) is synthesized by grafting poly(methylmethacrylate) (PMMA) in poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) via atom transfer radical polymerization transfer. It design concept intents to control the electrical characteristics of the gate dielectric layer without a large increase in operating voltage by incorporating an amorphous PMMA. The optimized P(VDF-TrFE)-g-PMMA with 7 mol% grafted PMMA showing reasonably high capacitance in low voltage field without current hysteresis is obtained by controlling the grafted PMMA percentage. Poly[[2,5-bis(2-octyldodecyl)-2,3,5,6-tetrahydro-3,6-dioxopyrrolo [3,4-c]pyrrole-1,4-diyl]-alt-[[2,2'-(2,5-thiophene)bis-thieno(3,2-b)thiophene]-5,5'-diyl]] (DPPT-TT) OFETs with P(VDF-TrFE)-g-PMMA gate dielectric exhibit a reasonably high field-effect mobility of over 1 cm2V-1s-1 with excellent operational stability. |
