| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 가을 (10/11 ~ 10/12, 창원컨벤션센터) |
| 권호 |
38권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Photo-patternable polyimide gate dielectrics for high-performance organic field-effect transistors(OFETs) |
| 초록 |
In this study, we synthesized photo-patternable polyimide(PI) for high-performance organic field-effect transistors (OFETs). The PI is used for surface modification of silicon oxide (SiO2) dielectric. We investigated the dielectric properties of PI/SiO2 bilayer using several PI. Imidization was demonstrated by using IR/NMR spectroscopy and surface roughness measurements were performed using Atomic Force Microscopy (AFM). Electrical performances of bottom-gate/top-contact pentacene, triethylsilylethynyl anthra-dithiophene (TES-ADT) and perylene tetracarboxylic diimide (PTCDI) based OFETs were excellent (low hysteresis, high mobility and on/off ratio). We also examined thick single PI layers without oxide dielectrics, too. The performance of our OFETs is comparable to previously reports and this new PI is expected to be a promising candidate for organic gate dielectric. |
| 저자 |
백용화1, 김경훈1, 박선욱1, 김세현2, 박찬언1
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| 소속 |
1포항공과대, 2영남대 |
| 키워드 |
Organic field-effect transistor; Dielectric
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| E-Mail |
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