| 초록 |
Insulating layers based on oxides and nitrides provide high capacitance, low leakage, and high breakdown field. However, their high process temperatures and brittleness make it difficult to achieve similar performance in flexible electronics. Here, we show poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) prepared via initiated chemical vapor deposition (iCVD), a versatile polymeric insulating layer that meets a wide range of requirements for next-generation electronic devices. Highly uniform and pure ultrathin pV3D3 with excellent insulating properties, a large energy gap (＞8 eV), tunneling-limited leakage characteristics and resistance to a tensile strain of up to 4% are demonstrated. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable pV3D3 to be grown conformally on plastic substrates to yield flexible FETs as well as on a variety of channel layers including organics, oxides, and graphene. |
