| 학회 | 한국재료학회 |
| 학술대회 | 2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 | 12권 1호 |
| 발표분야 | 전자재료 |
| 제목 | Electrical and optical properties of gallium doped zinc oxide thin films deposited with various substrate temperature |
| 초록 | Transparent conducting films of Ga-doped zinc oxide (GZO) were deposited on type of glass #1737 substrates by DC magnetron sputtering. We investigated the structural, electrical and optical properties of the GZO films with various substrate temperature of 100-400℃. The crystal structure of all thin films certified (002) preferred orientation by analyzing the X-ray diffraction patterns. The optical transmittance and reflectance of GZO thin films were recorded by UV-Vis-NIR spectrophotometer. And electrical properties were measured using four point probe system and Hall measurements. The oxygen vacancies was considered the main source of free electrons and it could be explained with the data obtained by X-ray photoelectron spectroscopy (XPS). The thin film deposited at 250℃ had lowest electrical resistivity values (5.3 x 10-4 Ω cm) with a high carrier concentration of 7.21 x 1020 cm-3 and an optical transmittance of over 85% in the visible region. |
| 저자 | 문대용, 문연건, 김쇄현, 홍민수, 전유진, 박종완 |
| 소속 | 한양대 |
| 키워드 | zinc oxide; DC magnetron sputtering; TCO; gallium |
