| 학회 |
한국재료학회 |
| 학술대회 |
2005년 봄 (05/26 ~ 05/27, 무주리조트) |
| 권호 |
11권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
고품위 InAs/GaAs 양자점을 위한 성장 기법 연구 |
| 초록 |
We investigated the morphology of self-assembled InAs quantum dots(QDs) grown by molecular beam epitaxy(MBE) on GaAs(001) substrate using atomic force microscopy(AFM) while varying the growth conditions. It is shown that the size and uniformity of these QDs can be controlled by the precise adjustment of growth temperature and growth rate and also by interruption time(30sec). With increasing the growth temperature, the QDs density becomes lower and the size larger. With increasing the growth rate, the QDs density becomes higher and the size smaller. And the low arsenic pressure provided the long migration length of indium adatoms and resulted in the narrow size distribution of InAs QDs. Also, the dot size uniformity is improves by using interruption time(30sec) with low growth rate, but isn't with high growth rate. |
| 저자 |
김준관, 전훈하, 서언미, 이수연, 이주호, 전민현
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| 소속 |
인제대 |
| 키워드 |
molecular beam epitaxy(MBE); InAs quantum dots(QDs); atomic force microscopy(AFM)
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| E-Mail |
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