| 초록 |
Fabrication of n-type organic thin-film transistor (OTFT) based on organic semiconductor and organic gate insulator is essential for the achievement of organic complementary logic circuit. This presentation deals with n-type OTFT with copper hexadecafluorophthalocyanine (F16CuPc) as an active semiconductor and a polyimide hybrid with controlled surface properties as a gate insulator. We have prepared a gate insulator by hybridizing a poly(amic acid) with a soluble polyimide and fabricated top-contact n-type OTFT using the prepared gate insulator. The performance of the F16CuPc OTFT with the polyimide hybrid is compared with that of F16CuPc OTFT with SiO2. In addition, we discuss the morpology of F16CuPc deposited on both polyimide hybrid and SiO2 using atomic force microscopy and x-ray diffraction. Field effect carrier mobility, subthreshold slope and Ioff of the F16CuPc OTFT with hybrid polyimide gate insulators are 6.0×10-3 V/cm2, 7 V/dec and 3.5×10-11 A, respectively. More detailed investigation on the effect of fabrication conditions on the F16CuPc OTFT with the hybrid polyimide gate insulator are given. |
