| 학회 |
한국고분자학회 |
| 학술대회 |
2016년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
41권 1호 |
| 발표분야 |
대학원생 구두발표 (영어발표, 발표15분) |
| 제목 |
Sulfur-Contained Gate Dielectric for Self-Healable Low-Voltage Organic Thin Film Transistors |
| 초록 |
In this research, we study that novel polymers formed by sulfur were synthesized and also applied for gate dielectric layers in thin film transistors through wet process. Most of all, sulfur-contained polymer films showed the good electrical insulating properties of about 1.0 × 10-7 A/cm2 at 1.0 MV/cm. Besides, those films showed the self-healable characteristic which is the recovering ability as the dielectric films after the electrical breakdown at over 100℃. Lastly, pentacene-based organic thin film transistors were also demonstrated by using the sulfur-contained polymer dielectric films. |
| 저자 |
이재혁1, 최주승1, 김의태2, 차국헌2, 윤명한1
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| 소속 |
1광주과학기술원, 2서울대 |
| 키워드 |
sulfur-contained polymer; gate dielectric; organic thin film transistor
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| E-Mail |
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