| 학회 |
한국고분자학회 |
| 학술대회 |
2017년 봄 (04/05 ~ 04/07, 대전컨벤션센터) |
| 권호 |
42권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling |
| 초록 |
We demonstrate that coupling between ion gel electrolytes and low-k oxide dielectrics can result in highly effective gating of field-effect transistors (FETs) based on 2D materials. This capacitive coupling is attained by laminating ion gel electrolytes onto fully fabricated 2D FETs that are gated through an underlying silicon dioxide layer. The laminated ion gel electrolyte layer significantly lowers the operating voltages and increases the on-current densities for a variety of 2D FETs while preserving low leakage current levels. Consequently, sub-4 V MoS2 FETs with exceptional device metrics are demonstrated (on/off switching ratio ＞ 106, electron mobility ~ 58 cm2/Vs, and sub-threshold swing ＜ 0.2 V/dec). Furthermore, this methodology was successfully applied to a diverse range of other 2D materials including BP, ReS2, and graphene, thus demonstrating the generality of the approach. |
| 저자 |
최용석1, 강준모2, Deep Jariwala2, Spencer A. Wells2, 강문성3, Tobin J. Marks2, Mark C. Hersam2, 조정호1
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| 소속 |
1성균관대, 2Northwestern Univ., 3숭실대 |
| 키워드 |
two-dimensional; transition metal dichalcogenide; MoS2; ReS2; black phosphorus
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| E-Mail |
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