| 학회 | 한국재료학회 |
| 학술대회 | 2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 | 16권 1호 |
| 발표분야 | B. Nanomaterials Technology (나노소재기술) |
| 제목 | Low pressure chemical vapor deposition of group III doped ZnO as transparent conducting oxide |
| 초록 | ZnO is of great interest for various applications ranging from the active layer of thin film transistor (TFT) and transparent conducting oxide (TCO) due to its wide band gap of 3.37eV and high mobility. Also, it has additional benefits including non-toxicity, low cost, high abundance, and possibility of low temperature deposition. Undoped ZnO films usually show n-type conductivity due to intrinsic defects such as oxygen vacancies and zinc interstitials. Currently, to improve the electrical conductivity of ZnO, many research groups are investigating doping of ZnO with group Ⅲ elements such as Al, In, Ga, etc. Especially, according to a previous report, Ga-doped ZnO shows lower electrical resistivity compared with Al-doped ZnO, mainly due to the close match in covalent bonding length between Ga-O (1.92Å) and Zn-O(1.97Å), which causes little lattice deformation even at high Ga concentration. However, a comparative study on electrical property and transmittance between Al and Ga doped ZnO has been rarely reported. In this presentation, we report the results on comparative studies on low pressure chemical vapor deposition (LP-CVD) of group Ⅲ doped ZnO films for solar cell application. Al- and Ga- doped ZnO thin films were deposited using diethyl Zn (DEZ) as a precursor for Zn and trimethyl Al (TMA) and trimethyl Ga (TMG) as doping sources, respectively. The film properties including microstructure, chemical composition, and electrical properties were characterized by various analysis techniques. Especially, the resistivity and optical transmittance were comparatively analyzed for Al- and Ga-doped ZnO thin films. |
| 저자 | 강혜민, 김도영, 김형준 |
| 소속 | 연세대 |
| 키워드 | ZnO; TCO |
