| 초록 |
SnS is promising candidates as an absorber materials for thin film solar cells, since its optical energy gap of 1.3 eV is close to the optimum energy gap 1.5 eV of solar cells, and it has a high absorption coefficient (~105cm-1) and a high conversion efficiency of about 25%. In spite of these advantages, the electrical properties of SnS thin films still need to be improved in order to make good SnS thin film solar cells. To improve efficiency of these devices better understanding of physical properties such as structural, optical and electrical properties is required. In this work, SnS thin films were deposited by RF magnetron sputtering at room temperature on glass substrate. The films were annealed in different range of annealing temperature from 100 ℃ to 450 ℃ for 1h. The structural, optical and electrical properties of SnS thin films have been studied by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX), field emission scanning electron microscope(FESEM), optical absorption spectroscopy, and hall effect measurements. As-grown SnS thin films exhibited better crystallinity with increasing annealing temperature, while the film of lower annealing temperature showed poor crystallinity. The energy band gap was also improved from 1.23 eV to 1.29 eV. |
