| 초록 |
Graphene has attracted much attention for future nanoelectronics due to its superior electrical properties such as extremely high carrier mobility, controllable carrier density, and its planar structure. Despite these promising characteristics of graphene, much work must still be done in order to successfully develop graphene FET. In this talk, three topics on the application of graphene to MOSFET are discussed; (1) contact resistant between metal and graphene S/D, (2) direct transfer of CVD graphene and its application of flexible FET, and (3) graphene gate electrode for MOSFET and Flash memory device. |
