| 학회 | 한국재료학회 |
| 학술대회 | 2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 | 16권 1호 |
| 발표분야 | G. Display (LCD, PDP, OLED) Materials(디스플레이 재료) |
| 제목 | Improvement in the transfer characteristics of tin oxide (SnO2) thin film transistor using buffered gate insulator |
| 초록 | The recent advances in oxide semiconductor materials have accelerated the development of field-effect transistors. ZnO-based thin film transistors (TFTs) have become attractive for use as driving devices, due to their better device performance and reliability. Since the report by Nomura et al ., amorphous In-Ga-Zn-O (a-IGZO) has been adopted as the channel layer due to its higher electron mobility. However, accurate and repeatable control of this complex material in mass production is not easy. Therefore, simpler polycrystalline materials, such as ZnO and SnO2, still remain possible candidates as the channel material. SnO2 based TFTs have been reported previously, and all the TFTs operate depletion-mode, requiring the application of a gate voltage to turn it off. In contrast to previously reports, the purpose of the work reported herein is to demonstrate a new type of TFT in which the channel material is SnO2. The SnO2 TFT reported herein operates as an enhancement-mode device, requiring the application of a gate voltage to turn the device on. Our successful approach was to use buffered gate insulator. The quality of the interface between the channel and dielectric plays a crucial role in transistor performance, and several insulators have been reported that reduce the number of defects in the channel and the interfacial charge trap defects. The interface treatment using buffered gate insulator improves the interface quality by lowering the interface trap density. This process can be easily adapted for industrial applications because the device structure and fabrication process in this paper are compatible with those of a-Si TFTs. |
| 저자 | 김웅선, 문연건, 김경택, 한동석, 신새영, 박종완 |
| 소속 | 한양대 |
| 키워드 | thin film transistor; oxide semiconductor; SnO2; buffered gate insulator |
