| 초록 |
Large area graphene films have been widely synthesized using the CVD method, which uses various transition metal films such as Cu, Ni, Pt, Ir, Ru as a catalyst. Especially, Ni is a widely used metal catalyst in this method to grow graphene due to the following several advantages. Controllable growth of multi-layer graphene is possible, and has the smallest lattice constant mismatch among the several transition metals. Graphene grown on Ni has a small polycrystalline domain structure, which hinders charge transport in the graphene plane. Furthermore, the domain size and shape distribution is not uniform in every layer of graphene, which may also have an effect on its electrical properties. Through this research, we will investigate how the domain structures are arranged in each stacked interlayer of the multi-layer graphene. This may reveal how the domain structures of multilayer graphene actually affect graphene properties and open a window to obtain high quality graphene. |
