| 초록 |
Polymer is one of attractive materials for bio, optical MEMS devises. One of them , polycarbonate(PC), is interested in device cause low cost, light weight and high transparency. However, there has been a few reports for dry etching of polycarbonate. So we studied O2 plasma etching with the addition of N2, SF6 and CH4, respectively, on polycarbonate using a reactive ion etching system. We used photo lithography process for patterning on polycarbonate. Experimental parameters were that changing composition O2 with N2, SF6 and CH4 respectively. And we changed RIE chuck power from 25W to 200W. During plasma etching process, plasma intensity was analyzed by optical emission spectroscopy for understanding of discharge intensity. After plasma etching, we also analyzed surface of polycarbonate with scanning electron microscopy (SEM), atomic force microscope (AFM) and surface spectrometer. The results showed the highest etch rate (0.56um) in 12O2/8SF6 compared with others. |
