| 초록 |
Inorganic phase change memories (PCM) have attracted great attention owing to its outstanding advantages such as fast switching speed, high-reliability, and excellent non-volatility. Nevertheless, critical challenges such as the effective integration of the PCM with the selection device and its efficient transfer to plastics remain to realize fully functional flexible PCM. Herein, we demonstrate crossbar-structured flexible phase-change memory array on plastics by Mo-based physical exfoliation technique. 1 Schottky diode (SD)-1 PCM integrated cells was fabricated on a rigid substrate by conventional semiconductor processes, and then physically lifted-off and transferred on a flexible substrate, eliminating the degradation problem of polymer and adjacent cells that occurs when processing directly on plastics. Using the current confinement effect of the Ni filament-based nanoscale heater, the chalcogenide Ge2Sb2Te5-based PCM was integrated with the oxide-based SD (Pt/TiO2/Ti) in a parallel array on a plastic substrate to minimize the electrical interference with adjacent cells. The device demonstrated reliable memory properties on plastics during bending conditions. |
