| 학회 |
한국고분자학회 |
| 학술대회 |
2010년 봄 (04/08 ~ 04/09, 대전컨벤션센터) |
| 권호 |
35권 1호 |
| 발표분야 |
분자전자 소재 및 소자(분자전자 부문위원회) |
| 제목 |
Selectively patterned highly conductive poly(3,4-ethylenedioxythiophene)-tosylate electrodes for high performance organic field-effect transistors |
| 초록 |
We have improved the performance of pentacene field-effect transistors by using highly conductive poly(3,4-ethylenedioxythiophene)-tosylate (PEDOT-Tos) source-drain electrodes (~ 103 S/cm) formed by a simple solution-based process. A high field-effect mobility of 0.25 cm2/Vs and an ON/OFF current ratio of 107 were obtained in pentacene-based bottom contact organic field-effect transistors (OFETs), which constitutes an improvement over OFETs based on Au and PEDOT:PSS electrodes. Two-dimensional grazing incidence x-ray diffraction (2D GIXD) and ultraviolet photoemission spectroscopy (UPS) results confirmed that the crystalline properties of the pentacene film and the hole injection from the PEDOT-Tos electrode to the pentacene layer are more efficient than those from Au and PEDOT:PSS electrodes. |
| 저자 |
박송희1, 임정아2, 백지혜1, 이화성2, 조길원2, 이준영3, 이동렬1, 조정호1
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| 소속 |
1숭실대, 2포항공과대, 3성균관대 |
| 키워드 |
PEDOT:PSS; OTFTs
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| E-Mail |
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