| 학회 |
한국화학공학회 |
| 학술대회 |
2003년 가을 (10/24 ~ 10/25, 한양대학교) |
| 권호 |
9권 2호, p.2664 |
| 발표분야 |
재료 |
| 제목 |
Dichlorobis[bis(trimethylamido)]hafnium과 물을 이용한 Hafnium Silicate의 단원자층 화학증착 |
| 초록 |
Hafnium silicate thin films were deposited on Si substrate for alternative gate dielectrics by atomic layer deposition (ALD) using a new single metallorganic precursor, dichlorobis[bis(trimethylsilyl)amido]hafnium (or HfCl2[N(SiMe3)2]2), and H2O as an oxidant in the temperature range of 150-400°C. The film growth rate and composition were investigated as a function of deposition temperature. The growth rate reached to its maximum value of 1.3Å/cycle at 250°C and rapidly decreased down to 0.3Å/cycle at 400°C. The FT-IR spectroscopy experiments were performed to investigate the change of the adsorbed species and the decomposition of the precursor on the surface as a function of the temperature. The composition analysis of as-deposited films using XPS and AES showed that the composition ratio of Si/(Hf+Si) linearly increased from 0.15 to 0.3 as the deposition temperature increased. From the XRD results, we confirmed that the incorporation of silicon into the film prevents the crystallization after annealing. |
| 저자 |
남원희1, 강상우1, 이시우1, 이정현2, Steven. M. George3
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| 소속 |
1포항공과대, 2삼성종합기술원, 3Dept. of Chemistry and Chemical Department |
| 키워드 |
hafnium silicate; thin film; high-k dielectric; atomic layer deposition |
| E-Mail |
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| VOD |
VOD 보기 |
| 원문파일 |
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