| 학회 |
한국재료학회 |
| 학술대회 |
2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 |
16권 1호 |
| 발표분야 |
C. Energy and the Environment(에너지 및 환경재료) |
| 제목 |
Synthesis and characterization of Cu(In,Ga)Se2 thin films by electrodeposition |
| 초록 |
Cu(In,Ga)Se2 (CIGS) precursor thin films have been prepared onto Mo coated glass substrates by electrodeposition at room temperature with various concentration of copper(II) chloride from 12 to 36 mM. The electrolytic bath used contains copper(II) chloride (CuCl2), indium(III) chloride (InCl3), gallium(III) nitrate hydrate (Ga(NO3)3 • xH2O), selenous acid (H2SeO3), lithium chloride (LiCl), and potassium hydrogen phthalate (C8H5KO4) . The pH of electrolytic bath solution was adjusted to 3.0 by adding diluted HCl. The as-deposited CIGS precursors were annealed in Ar atmosphere at 550 °C for 1 h. The effects of CuCl2 concentration on the structural, morphological, and compositional properties of CIGS thin films were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and energy dispersive spectroscopy (EDS), respectively. These properties were found to be strongly dependent on the concentration of CuCl2. As concentration of CuCl2 solution increases, the (112) diffraction peak shifts from 26.99 to 26.70 with single phase polycrystalline chalcopyrite structure. FE-SEM micrographs showed that as concentrations of CuCl2 increases, the as-deposited thin film becomes smooth and uniform surface morphology with fine grains, changes in to larger grains with crack morphology after annealing. The presence of In and Ga atomic ratio of CIGS thin films decreased with increasing concentrations of CuCl2. |
| 저자 |
Doo Sun Choi1, Seung-Yup Lee2, Kyung-Am Kim3, Jong Ha Moon4, Jin Hyeok Kim5
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| 소속 |
1Department of Material Science and Engineering, 2Chonnam National Univ., 3300 Yongbong-Dong, 4Puk-Gu, 5Gwangju 500-757 |
| 키워드 |
Electrodeposition; CuInGaSe2 (CIGS); thin film
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| E-Mail |
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