| 초록 |
In recent years, flexible lighting sources have been under active development for consumer applications. Especially, Flexible GaN Light Emitting diode (LED) is one of the promising candidates for the back-light unit (BLU) of a flexible display due to its high performance and ease of producing white light source. Herein, we demonstrated the high performance GaN LED from sapphire substrate with laser lift-off (LLO) process. New kinds of carrier substrates were applied to attain non-wetting and direct transfer protocol. The stress of laser induced decomposition was well dispersed by SU-8 and thermal release tape which gave structure coverage and sufficient adhesion. Fabricated flexible GaN LED on the polyimide substrate showed similar electrical properties to the GaN LED on a sapphire substrate. With its advantage of high quality, we can provide the BLUs for future flexible displays. |
