| 학회 | 한국재료학회 |
| 학술대회 | 2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 | 12권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Formation of Nanocrystallites in nc-Si:H Films by Co-sputtering Aluminium and Silicon |
| 초록 | Silicon is an indirect band structured material with a band gap of ~ 1.1 eV. Therefore, it emits little visible light at R.T. and as a result has not been applied in optoelectronic devices. However, photoluminescence (PL) phenomena have recently been observed from Si films with Si crystallites of less than 5 nm in size. The luminescence is extremely sensitive to the size and fraction of the nanocrystallites. Recently, the aluminium-induced crystallization (AIC) technique has been utilized to lead to the formation of crystallites in amorphous Si films. It is known that the overall layer exchange of Si with Al films or vice versa occurs during the transformation from amorphous to crystalline phase. The Al migrates from interface into Si layers, dissociating a large number of Si-Si bondings. However, there has been little experimental observation reported for Si nanocrystallite formation in the AIC processing; in particular the effect of thermal annealing and doping techniques needs to be examined in detail. In this study, we investigated the effect of Al-doping on the formation of nanometer-scale crystallites in nc-Si:H thin films by co-sputtering Al chips and a Si target. The nanostructural, chemical, and optical features of nc-Si thin films were systematically investigated as a function of the amount of doped-Al and heat-treatment conditions. |
| 저자 | 심재현, 조남희 |
| 소속 | 인하대 |
| 키워드 | nc-Si; MIC; Photoluminescence |
