| 학회 | 한국재료학회 |
| 학술대회 | 2016년 가을 (11/16 ~ 11/18, 경주 현대호텔) |
| 권호 | 22권 2호 |
| 발표분야 | G. 나노/박막 재료 분과 |
| 제목 | Crystallization of the oxide semiconductor using visible laser and fuel |
| 초록 | Recently, the development of large area display on a flexible substrate has been increasing. However, the heat limitation of flexible substrates requires low temperature processes in the device layer fabrication, which reduces device performance and reliability. Likewise, TFT device process should be performed at a high temperature for good performance. So, ensuring the excellent device characteristics with low-temperature process is very important in the oxide semiconductor TFT device industry. Particularly, the quality of oxide semiconductor channel is the most temperature-sensitive factor. TFT fabrication based on solution processes has been used in industry to lower the manufacturing cost. In the solution process, crystallinity of the channel material is a very important property to device mobility. In this work, we have implemented laser annealing into solution-processed In2O3 TFT fabrication at room temperature using combustion process. The reason is that laser annealing has advantages that can ensure high energy and shallow thermal depth. High thermal energy released from combustion reaction of urea in In3+ solution does not only form In2O3, but also partially crystallize the channel. In this process, urea is very important material to compensate for the low energy of the visible laser. |
| 저자 | Jae Won Choi1, Soo Yeun Han2, Manh-Cuong Nguyen1, An Hoang Thuy Nguyen2, Jung Yeon Kim1, Rino Choi2 |
| 소속 | 1Department of Material Science and Engineering, 2Inha Univ. |
| 키워드 | <P>TFT device; Oxide semiconductor; Visible laser; Fuel(Urea)</P> |
