| 초록 |
These days, the non-fullerene (NF) acceptors replace the fullerene derivatives because of their superiority. However, NF acceptors frequently behave react with the polyethyleneimine ethoxylated (PEIE), and hence a decline in the device performance and stability could not be avoided. Herein, we demonstrated a novel strategy to mitigate the reaction between PEIE and NF acceptor by introducing the ethanedithiol self-assembled monolayer (SAM) at the PEIE/photoactive layer. As a result, the PEIE with EDT-SAM exhibits lower WF, suppressed trap-assisted recombination, and higher electron mobility compared to pristine PEIE counterparts. Consequently, the open-circuit voltage (VOC) and fill factor (FF) are drastically improved. Therefore, a significant performance enhancement was obtained for the PEIE-EDT-based devices with the power conversion efficiency (PCE) of ＞12% for rigid and ＞10% for flexible devices. |
