| 학회 |
한국고분자학회 |
| 학술대회 |
2004년 가을 (10/08 ~ 10/09, 경북대학교) |
| 권호 |
29권 2호, p.424 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Synthesis of Photoacid Generator Based Polymers And Its Application to AFM Lithography |
| 초록 |
A photoacid generating (PAG) monomer containing an arylsulfonium triflate group was synthesized and its polymerization behavior was investigated by radical homopolymerization and copolymerization with various methacrylates found in chemically amplified photoresists. The molecular weight and the content of PAG unit were controlled for improving thermal stability and sensitivity. Among these PAGs, arylsulfonium salts as a role of an electron acceptor enable the high lithographic speed in AFM lithography. The patterning of the spin-cast polymer on a silicon substrate was carried out under various conditions using AFM lithography, and protruded oxide patterns were fabricated at the high lithographic speed. |
| 저자 |
오희영, 윤현진, 이해원, 김용일
|
| 소속 |
한양대 |
| 키워드 |
photoacid generator polymer; AFM lithography
|
| E-Mail |
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