| 학회 | 한국재료학회 |
| 학술대회 | 2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 | 20권 2호 |
| 발표분야 | F. 광기능/디스플레이 재료(Optical Functional and Display Materials) |
| 제목 | The Effects of Annealing on P-type ZnO Thin Film with As doping |
| 초록 | ZnO thin film has been adopted for various electronic device. For making P-N junction device, n & p type ZnO formation is required. However, it is difficult to get P-type ZnO film. In this study, we demonstrated P-type ZnO thin film with As doping and investigated post annealing on ZnO film. ZnO thin film was prepared by spin coating with using zinc acetate dihydrate, monoethanolamine(MEA), 2-methoxyethanol and arsenic oxide. Film characterization includes Hall measurment, XRD, SEM and XPS. It is confirmed that arsenic doped ZnO thin films become p type. Its carrier concentration are 3.05ｘ1015 ~ 8.73ｘ1015cm-3. XRD peaks shows that when arsenic was doped in ZnO, overall peak intensities of peaks are decreased. Even additional annealing does not convert the polarity of ZnO thin film, keeping p-type, while electrical properties (ex, mobility and resistivity) of films are improved by annealing. Mobility is enhanced from 66.70 to 379.3 cm2/Vs and resistivity is decreased from 30.65 to 3.6 Ω*cm. These improvements are attributed to larger grain caused by post annealing, whicn leads to better electrica properties. Therefore, its is proposed that As doping and additional annealing could result in p-type ZnO and improvement in electrical properties, respectively. 이 논문은 2014년도 정부(미래창조과학부)의 재원으로 한국연구재단-나노•소재기술개발사업의 지원을 받아 수행된 연구임”(2009-0082580) |
| 저자 | 정철원, 길영인, 최창환 |
| 소속 | 한양대 |
| 키워드 | ZnO; Doping; Mobility; Thin Film |
