| 초록 |
Pulsed-laser-induced melt-mediated crystallization of Si films on glass and/or flexible substrates has become an essential, substantial, and growing technology for realizing high-performance thin-film transistors (TFTs). The technology enables the manufacture of advanced ultra-high-resolution LCDs and OLED displays that are found in state-of-the-art smartphones. In addition to these increasingly sophisticated and value-added products, the approach can also potentially provide a variety of high-quality Si films for 3D microelectronics, photovoltaic devices, and other large-area-electronic products. In this presentation, the field’s current status and future challenges/opportunities as regards both fundamental understanding and technological capabilities will be discussed (including the possibility of using newly available ultra-high-frequency high-power fiber lasers to attain the next level of technical and operational capabilities, via a specific approach referred as spot-beam crystallization (SBC)). |
