| 학회 |
한국재료학회 |
| 학술대회 |
2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 |
21권 2호 |
| 발표분야 |
A. 전자/반도체 재료 |
| 제목 |
Enhanced endurance characteristic of resistive switching MnOx thin film incorporated with ‘non-lattice’ oxygen and interfacial layer between electrode and MnOx |
| 초록 |
With various oxygen concentrations and two different top electrodes, electrical endurance characteristic of resistive switching MnOx thin film was comparatively investigated. Experimental results of changing oxygen concentration during the post-deposition annealing process revealed that electrical endurance characteristic can be significantly improved by possessing high ‘non-lattice oxygen’ concentration in resistive switching thin film and minimizing oxygen consumption during resistive switching. Moreover, two different top electrode materials of Ti and Pt over the common MnOx/Pt structure presented significantly distinct electrical endurance characteristics. Various structural and electrical analyses disclosed that the interfacial oxide layer associated with Ti in the Ti/MnOx/Pt structure improved the electrical endurance characteristic. In order to examine the feasibility of fabrication within sophisticated semiconductor process, a 250 nm-diameter via-hole structure device composed of TiN/MnOx/Pt was fabricated. The promising electrical endurance and retention characteristics and the impressively narrow distribution of resistive switching operation parameters were obtained in the MnOx thin film. Additionally, an 8x8 crossbar array with 100 nm-width interconnection line were fabricated to confirm the scalability and the stability of the resistive switching performances in the Ti/MnOx/Pt structure. |
| 저자 |
이전국, 주현수
|
| 소속 |
Korea Institute of Science and Technology |
| 키워드 |
Resistive Switching; Endurance; MnOx; Non-lattice Oxygen; Interfacial Oxide Layer
|
| E-Mail |
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