| 학회 |
한국화학공학회 |
| 학술대회 |
2013년 가을 (10/23 ~ 10/25, 대구 EXCO) |
| 권호 |
19권 2호, p.1849 |
| 발표분야 |
재료 |
| 제목 |
High On-Current Polyhedral Type Field Effect Transistors with Laterally Grown ZnO Nanorods |
| 초록 |
Field effect transistors (FETs) containing polyhedral structures (i.e., circle-, square- and triangle-type geometries) with active layers of laterally grown ZnO nanords have been studied. This method enables us to directly, selectively grow the ZnO nanorods in lateral direction between source and drain electrodes by a simple solution method with eliminating vertical growth components and complex structural networks. Current-voltage (I-V) properties measured through the gate infer that laterally grown ZnO nanorods active channel is n-type. The circle, square and triangle type FETs based on the laterally-grown ZnO nanrords showed mobilities of 13~ 16 cm2 V-1 S-1 and on/off ratios of 3.6ｘ103~1.78ｘ104. More importantly, polyhedral type FETs showed a large drain-source on-current performance of ~1 mA. The polyhedral type FETs fabricated in this work showed a much better performance than the previously reported solution-based ZnO FETs. These devices open up a new range of applications for laterally-grown ZnO FETs where larger current has to be switched. |
| 저자 |
박용규, 노원엽, Mohammad Vaseem, 양화영, 정다운진, 한윤봉
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| 소속 |
전북대 |
| 키워드 |
Laterally grown ZnO nanorod; ZnO nanorod FETs; Polyhedral structure device
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| E-Mail |
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| 원문파일 |
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