| 학회 | 한국재료학회 |
| 학술대회 | 2018년 봄 (05/16 ~ 05/18, 삼척 쏠비치 호텔&리조트) |
| 권호 | 24권 1호 |
| 발표분야 | C. 에너지 재료 분과 |
| 제목 | The Influence of TCO Deposition Temperature on Characteristics of Cu2ZnSn(S,Se)2 Thin Film Solar Cell |
| 초록 | Photovoltaic technology using Cu2ZnSn(S,Se)4 (CZTSSe) as an absorber layer is widely used because it show a useful bandgap energy range of 1.0 to 1.5 eV and an absorption coefficient of more than 104 cm-1. CZTSSe solar cells consist of various thin films stack, which include Mo, CZTSSe absorber, CdS, intrinsic ZnO (i-ZnO), Al doped ZnO (ZnO:Al or AZO), and Au electrode. Zinc oxide (i-ZnO) is an oxide semiconductor with a wide bandgap and can be doped with several elements such as Al or B. Especially, Al doped ZnO (ZnO:Al or AZO) is widely studied as a transparent conducting electrode in optical sensors, solar cells, and flat panel displays. Furthermore, Al doped ZnO is non-toxic, abundance in nature and also shows good chemical stability against hydrogen plasma. Therefore, it is a potential and suitable candidate for photovoltaic applications. In this study, Al doped ZnO layer was deposited by RF magnetron sputtering method with ZnO:Al (2wt.%) target on CdS/CZTSSe solar cell. We controlled deposition temperature from 200 oC to 400 oC. The influence of deposition temperature was investigated on the basis of the comparison between the performances of CZTSSe solar cells. Finally, the optimize deposition temperature was achieved. |
| 저자 | 정희지, 허재영 |
| 소속 | 전남대 |
| 키워드 | <P>CZTSSe; Solar cell; TCO; Al doped ZnO; i-ZnO</P> |
