| 학회 |
한국재료학회 |
| 학술대회 |
2008년 가을 (11/07 ~ 11/07, 차세대융합기술연구원) |
| 권호 |
14권 2호 |
| 발표분야 |
반도체재료 |
| 제목 |
Transparent ZnO Based Oxide Thin Film Transistors Fabricated by Solution Process |
| 초록 |
We synthesized the stable solution for the deposition of the zinc tin oxide (ZTO) and indium zinc oxide (IZO) thin films by simple solution process. The ZTO and IZO solutions were prepared using zinc acetate dihydrate, tin(II) chloride and indium(III) acetate as the precursors and acetylacetone and diethanolamine as the chelating agents. The ZTO and IZO thin films were fabricated using spin-coating and annealed at 500°C under ambient condition. Transparent thin film transistors (TTFTs) with ZTO and IZO channel layer by solution process were demonstrated. The fabricated TTFTs with bottom gate/top contact structure exhibit high transparency (average~80%) in visible region and good characteristics with mobilities of ＞2cm2/V·s. The TTFTs with bottom gate/bottom contact structure using ITO source/drain electrode were also fabricated and exhibit high mobilities of ＞3cm2/V·s. |
| 저자 |
서석준, 황영환, 전준혁, 배병수
|
| 소속 |
KAIST |
| 키워드 |
amorphous oxide semiconductor; solution process; transparent thin film transistor
|
| E-Mail |
|
