| 학회 | 한국재료학회 |
| 학술대회 | 2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 | 13권 1호 |
| 발표분야 | 전자재료 |
| 제목 | Influence of microstructure on the electrical properties of gallium doped zinc oxide deposited by DC magnetron sputtering |
| 초록 | Zinc oxide thin films have attracted much considerable attention for many applications such as solar cells, displays, sensors, surface acoustic wave devices and the films are a promising alternative to indium tin oxide (ITO) as transparent conducting oxides (TCOs) for flat panel displays (FPD) because of their high conductivity, good optical transmittance in the visible region and low-cost fabrication. Ga-doped zinc oxide (GZO) films were prepared by DC magnetron sputtering on glass #1737 substrates. We have investigated structural, electrical and optical properties of the GZO films with various plasma discharge power, substrate temperature and working pressure. The lowest resistivity of 5.3ｘ 10-4 Ω-cm and the optical transmittance of over 85 % at 550 nm wavelength in the visible light region were obtained for GZO thin film deposited with working pressure of 5 mTorr, substrate temperature of 250 ℃ and plasma power density of 0.5 W/cm2. In this study, the relation of microstructure of the GZO thin films to carrier concentration and carrier mobility was investigated. The carrier concentration of GZO thin films were determined by substitutional Ga, interstitial Zn, and oxygen vacancies. Among them, oxygen vacancies have exerted the strongest influence on carrier concentration. The mobility decreases as plasma discharge power increases as the number of oxygen vacancies that act as electron traps increases and also the mobility decreases as grain size decreases as grain boundary scattering increases. |
| 저자 | 문대용, 문연건, 박종완 |
| 소속 | 한양대 |
| 키워드 | zinc oxide; TCO |
