| 학회 |
한국재료학회 |
| 학술대회 |
2008년 봄 (05/22 ~ 05/23, 상록리조트) |
| 권호 |
14권 1호 |
| 발표분야 |
전자재료 |
| 제목 |
Characterizations of Al-doped ZnO Thin Films by In-line DC Sputtering |
| 초록 |
We have fabricated Al-doped ZnO (AZO) thin films by vertical in-line dc magnetron sputtering for TCO applications. The effects of substrate temperature and dc power on the characteristics of AZO thin films are investigated and also optimized the process conditions to get the best electrical and optical properties. The fabricated thin films show a good electrical and optical uniformity within ±5% over the whole area of substrate (200mm × 200mm) ; the minimum resistivity of 8 × 10-4 Ωcm and the average transmittance of 90% within the visible wavelength range. We have found that the band gap (Eg) increases with increasing substrate temperature and dc power, whereas the crystallinity is getting improved with increasing substrate temperature. The binding energy of Zn 2p3/2 and O 1s is observed to decrease as the substrate temperature increases. |
| 저자 |
허기석1, 김태원1, 이종호1, 신동찬2
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| 소속 |
1한국생산기술(연), 2조선대 첨단소재공학과 |
| 키워드 |
Al-doped ZnO; AZO; Transparent Conducting Oxides; TCOs; In-line sputtering
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| E-Mail |
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