| 학회 | 한국재료학회 |
| 학술대회 | 2015년 봄 (05/14 ~ 05/15, 구미코) |
| 권호 | 21권 1호 |
| 발표분야 | A. 전자/반도체 재료 |
| 제목 | Sintering and Electrical Properties of Co3O4-doped ZnO-Zn2BiVO6 Ceramics |
| 초록 | Doped-ZnO ceramics are widely applied to electronic devices using grain boundary effect. ZnO varistor is one of the semiconductor resistance device, manufactured by various chips and disks. This device is applied to protect the internal components is circuits from electrostatic discharge (ESD), surge or lightning. These ceramics with the addition of small amounts of other metal oxides exhibit highly non-ohmic behavior in current-voltage characteristics. The electrical properties of ZnO varistor depend greatly on the dopants. In this study, Co3O4 doping effect on microstructure and electrical properties of ZnO-Zn2BiVO6 varistor ceramics were investigated. The starting materials were used 99.9% of ZnO, Bi2O3, V2O5 and Co3O4 powder. 0.0 ~ 1.0 at% Co3O4-doped ZnO-Zn2BiVO6 ceramicss were fabricated by a commercial ceramic sintering processes. These ceramics were prepared by sintering at 700 to 1200 ℃. The densification and grain growth of Co3O4-doped ZnO-Zn2BiVO6 ceramics was influenced by Co3O4 content. In this study, Co3O4 doping effect on microstructure and electrical properties of ZnO-Zn2BiVO6 varistor ceramics was investigated and exhibited a nonlinear behavior by proper amount of Co3O4 As a result, it can be seen that the incorporation of Co3O4 has a significant effect on nonlinear properties. The behavior of a can be related to the potential barrier depending on electronic states at the grain boundaries in accordance with the incorporation of Co3O4 Therefore, the increase or decrease of a amount of Co3O4 is attributed to the increase or decrease of potential barrier height at the grain boundaries. |
| 저자 | You Bi KIM1, Youn Woo HONG2, Young Jin LEE3, Jong Hoo PAIK3, Man Ho CHO3 |
| 소속 | 1Department of Physics, 2Yonsei Univ., 3Korea Institute of Ceramic Engineering and Technology |
| 키워드 | ZnO Varistor; Electrical Property; Grain Boundary; Co<SUB>3</SUB>O<SUB>4</SUB> |
