| 초록 |
In recent, the solution-based chemical deposition processes have been employed to deposit the insulators and the semiconductors in the fabrication of TFTs instead of the vacuum processes. In this study, Al2O3 was used as a dielectric layer by ALD process. ALD process is good to make easily and has high quality. For the semiconductor layer, In2O3 was deposited by an inkjet printer. The as-deposited layers were annealed in a box furnace at different temperature conditions. Metal-insulator-semiconductor device was employed to obtain the electrical properties. Physical properties of the films were investigated by SEM. The electrical characteristics of the prepared TFTs were obtained by a three-probe station. |
