| 초록 |
Here, we investigate effect of parylene-c as gate dielectric layer for top-gate inkjet-printed organic field-effect transistors (OFETs) with indacenodithiophene-co-benzothiadiazole (IDTBT) and poly([N,N'bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)2,6-diyl]-alt-5,5'-(2,2'-bitthiophene)) (PNDI2OD-T2) as p- and n-channel semiconductor, respectively. The thin parylene-c film show large gate leakage current density and low breakdown voltage. furthermore, reduced field-effect mobility (μ) are observed in IDTBT and P(NDI2OD-T2) OFETs with the parylene-c single layered dielectric. X-ray photoelectron spectroscopy (XPS) analysis result reveals that the degradation of μ is due to unwanted chemical interaction between parylene-c and conjugated polymer surface. To realize reliable device operation with parylene-c as gate dielectric, we insert thin poly(methyl-methacrylate) (PMMA) and polystyrene (PS) film as a protection layer on the conjugated polymer surface. |
