| 초록 |
Recently, heterojunctions composed of two-dimensional (2D) layered materials have been studied not only to understand novel physical phenomena, but also to implement multi-functionalities in electronic and optoelectronic devices. Heterojunctions can be classified into three different types based on their relative band alignment: type-I (stradding gap), type-II (staggered gap), and type-III (broken gap) and each type can be applied to the target application. In this study, we fabricated Molybdenum disulfide (MoS2)/alpha phase-Molybedenum trioxide(α-MoO3) monolithic heterostructure which has a broken gap and analyzed their electrical properties under various bias and temperature conditions. We observed a negative differential resistance (NDR) phenomenon in the MoS2/α-MoO3 field-effect transistor (FET) under specific bias condition and also scrutinized the origin of NDR. Our experimental study has paved the way for understanding charge transport mechanism in broken gap heterojunctions. |
