| 초록 |
Directed self-assembly of block copolymer is one of the most promising candidates for sub-10 nm scale lithography due to its cost effectiveness and outstanding pattern resolution. However, further improvements of line edge fluctuation and pattern resolution limitation of Poly(styrene-b-methyl methacrylate) (PS-b-PMMA) block copolymer remain as critical challenges. Here, we suggest a newly designed block copolymer that can form sub-10 nm perpendicular lamellar pattern. The block copolymer was synthesized by reversible addition-fragmentation chain-transfer polymerization copolymerized with fluorine containing monomer, which has hydrophobicity. The modified block copolymer showed increased pattern resolution than conventional PS-b-PMMA due to two times higher Flory-Huggins interaction parameter (χ). Also, synthesized BCPs were vertically aligned on non-selective surface, which means neutral brush does not require for formation of perpendicular lamellar morphology. |
