| 초록 |
Perovskite solar cells(PSCs) gained attention for its high power conversion efficiency(PCE). To further enhance the PCE, it is imperative to optimize the device architecture, surface and interfacial morphology and composition of the active perovskite layer. Herein, MABr is used as a passivation layer on top of Csx(MAxFA1-x)100-xPb(IxBr1-x)3 to improve charge collection and lower the charge recombination. The perovskite is prepared using anti-solvent technique, using SnO₂ and spiro-OMeTAD as ETL and HTL. Structural, optical and electrical characterizations were performed and analyzed for the PSC device. The passivation layer remarkably reduced the excessive PbI₂ phase, grain boundaries and surface defects, facilitates the charge transfer in the device, resulting in ＞10% increment in the PCE of the device (19.5%). This work manifests the defect-passivation and charge facilitator roles of interfacial passivation layer on the rear surface of perovskite film. |
