| 학회 | 한국공업화학회 |
| 학술대회 | 2005년 가을 (10/28 ~ 10/29, 건국대학교) |
| 권호 | 9권 2호 |
| 발표분야 | 정보,전자소재 |
| 제목 | Low-resistance Ni/Rh and Ni/Au/Rh ohmic contacts on p-type GaN |
| 초록 | GaN–based compound semiconductors have attracted great interest for applications to optoelectronic devices,such as LED, LD, and UV photo-detectors.[1,2] For the realization of high-quality devices, it is essential to make low-resistance ohmic contacts. In this study, we have investigated Ni/Rh and Ni/Au/Rh metal schemes for ohmic contacts to p-GaN. Mechanisms are suggested to explain the ohmic behavior of Ni/Rh and Ni/Au/Rh contacts on p-GaN. Reference [1] S . Nakamura, Science 281, 956 (1999). [2] S . Nakamura , M. Senoh , N. Iwasa, and S. Nagahama, Jpn. J. Appl. Phys.,Part 2 34, L797 (1995). |
| 저자 | 박정우, 김동유 |
| 소속 | 광주과학기술원 |
| 키워드 | Light Emitting Diode; Ohmic contact |
