| 초록 |
The effect of p-GaN layer with Cp2Mg flow rate and growth temperature on electrical and optical properties of InGaN/GaN MQW LED structures were investigated. As the Cp2Mg flow rate increased at constant growth temperature, an operation voltage decreased from 5.18 to 4.34 V at 20 mA injection current. However, the output power characteristics measured as a function of injection current at room temperature showed the highest light output power at Cp2Mg flow rate of 1.06 mmol/min. Also, the current-voltage characteristics at room temperature as a function of the growth temperature of p-GaN layer, an operation voltage decreased with increasing growth temperature. The output power characteristics measured as a function of injection current at room temperature achieved the highest light output power value at growth temperature of 1050 ℃. When the output power-current-voltage characteristics consider with Cp2Mg flow rate and growth temperature of p-GaN layer, optimum condition showed that Cp2Mg flow rate is 2.13 mmol/min and growth temperature of 1050 ℃. Also, We believe that the light output power is more sensitive to growth temperature than Cp2Mg flow rates in a certain growth condition range of p-GaN:Mg layer. |
