| 초록 |
Zinc oxide (ZnO) has attracted attention as promising materials for next-generation semiconductors because of high field-effect mobility and transparency in the visible light region. Colloidal QDs with size tunable band-gap are used for photosensing visible light due to high band-gap of ZnO. However, the photodetection characteristics and stability performance of QDs are issue of concern for applications. Here, atomic layer deposition (ALD) was used to infill the pore space of CdZnSeS QDs films with Al2O3 to fabricate the visible phototransistor with enhanced photo-sensitivity, photo-responsivity, and photo-detectivity and reduced air degradation. Also, the photo-excited charge transfer mechanism was investigated through X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). |
