| 학회 | 한국화학공학회 |
| 학술대회 | 2010년 봄 (04/22 ~ 04/23, 대구 EXCO) |
| 권호 | 16권 1호, p.848 |
| 발표분야 | 재료 |
| 제목 | Properties of GaN Epitaxial Films on Silicon Substrates Grown by MHVPE (Modified Hydride Vapor Phase Epitaxy) and Seed-solution Method |
| 초록 | In this study, Gallium Nitride (GaN) films are deposited on silicon substrates by applying MHVPE and seed-solution method. The GaN seed layer is formed on silicon substrate through spin-coating and nitridation process prior to the growth of GaN epi-layer. Temperature for both nitridation and deposition process is fixed at 850°C. Tris N,N-dimethyldithiocarbamato gallium (III) (Ga(mDTC)3) is used as precursor for the formation of GaN seed-layer. The surface morphology of the GaN films is observed by Scanning Electron Microscopy (SEM-Hitachi S4100). Structure of the GaN films observed by X-Ray Diffraction (XRD) is hexagonal structure with (0002) preferred orientation. Photoluminescence (PL) with He-Cd laser source (wavelength 325 nm) shows that value of the GaN film band gap is about 3.4 eV. Acknowledgement: This work was supported by the Korea Research Foundation (KRF) grant funded by the Korea government (MEST)(No. 2009-0077228) |
| 저자 | 홍기남, 김동욱, 김홍탁, 박진호 |
| 소속 | 영남대 |
| 키워드 | Gallium Nitride; Seed layer; Ga(mDTC)3; precursor; MHVPE |
| 원문파일 | 초록 보기 |
