| 학회 |
한국고분자학회 |
| 학술대회 |
2008년 가을 (10/09 ~ 10/10, 일산킨텍스) |
| 권호 |
33권 2호 |
| 발표분야 |
분자전자소재 및 소자기술의 현황(분자전자 부문위원회) |
| 제목 |
Effects of bending strain on pentacene field-effect transistors |
| 초록 |
We have fabricated bending-strained pentacene films in a flat state, which makes it possible to investigate the strain effect on the pentacene field-effect transistor without Poisson effect and the electrode delamination. In case of compressive strain, the field-effect mobility increased by 8.7% and 13% at ε=1.0% and 1.2%, respectively, and threshold voltage and turn-on voltage shifted positively. In contrast, the tensile bending at ε=1.1% and 1.3% caused the decrease in field-effect mobility of 18% and 27%, respectively, and induced a negative shift of threshold votage and turn-on voltage. The thin film phase in the pentacene film is increased from 89.3 to 96.5% by compressive strain but decreased to 72.3% by tensile strain. The bending-stress driven phase transition in pentacene films between the bulk phase and the thin film phase was driven by the change in-plane dimension of unit cells between two phases to reduce the external bending stress. |
| 저자 |
양찬우, 윤진환, 김세현, 홍기표, 정대성, 이문호, 박찬언
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| 소속 |
포항공과대 |
| 키워드 |
organic field-effect transistors; pentacene; bending strain; phase transition
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| E-Mail |
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