| 학회 |
한국재료학회 |
| 학술대회 |
2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 |
17권 1호 |
| 발표분야 |
A. Information and Sensor Materials(정보소재 및 센서) |
| 제목 |
Fully room temperature fabricated TaOx thin film for non-volatile memory |
| 초록 |
Resistance random access memory (ReRAM) is a promising candidate for next-generation nonvolatile memory because of its advantageous qualities such as simple structure, superior scalability, fast switching speed, low-power operation, and nondestructive readout. We investigated the resistive switching behavior of tantalum oxide that has been widely used in dynamic random access memories (DRAM) in the present semiconductor industry. As a result, it possesses full compatibility with the entrenched complementary metal-oxide-semiconductor processes. According to previous studies, TiN is a good oxygen reservoir. The TiN top electrode possesses the specific properties to control and modulate oxygen ion reproductively, which results in excellent resistive switching characteristics. This study presents fully room temperature fabricated the TiN/TaOx/Pt devices and their electrical properties for nonvolatile memory application. In addition, we investigated the TiN electrode dependence of the electrical properties in TaOx memory devices. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to 105 cycles. Moreover, the benefits of high devise yield multilevel storage possibility make them promising in the next generation nonvolatile memory applications. |
| 저자 |
Sun Young Choi1, Sangsig Kim2, Jeon-Kook Lee3
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| 소속 |
1Optoelectronic Materials Center, 2Korea Institute of Science and Technology, 3Department of Electrical Engineering |
| 키워드 |
resistive switching; ReRAM; TaOx
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| E-Mail |
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